IRF9Z34PBF
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 60V 18A TO220AB
$1.92
Available to order
Reference Price (USD)
1+
$1.79000
50+
$1.43400
100+
$1.25480
500+
$0.97310
1,000+
$0.76824
2,500+
$0.71702
5,000+
$0.68117
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with IRF9Z34PBF, a reliable Transistors - FETs, MOSFETs - Single by Vishay Siliconix. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IRF9Z34PBF meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 88W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
STMicroelectronics
STP270N8F7
Diodes Incorporated
ZXMN2069FTA
Rohm Semiconductor
RTM002P02T2L
Diodes Incorporated
ZVN4306GTA
IXYS
IXFN340N06
Infineon Technologies
IPW60R045CPAFKSA1
onsemi
NVB110N65S3F
Vishay Siliconix
SQS850EN-T1_GE3
Rectron USA
RM21N650TI
Infineon Technologies