IRFB3006GPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 195A TO220AB
$2.53
Available to order
Reference Price (USD)
1,000+
$1.97895
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of IRFB3006GPBF, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IRFB3006GPBF is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 170A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Nexperia USA Inc.
PSMN3R5-80YSFX
Fairchild Semiconductor
FCU4300N80Z
Rohm Semiconductor
SCT4026DEHRC11
Infineon Technologies
BSO303SPH
Vishay Siliconix
SIHB21N60EF-GE3
Vishay Siliconix
SUP50020EL-GE3
Toshiba Semiconductor and Storage
SSM3J374R,LF
Fairchild Semiconductor
FDU6030BL
Vishay Siliconix
IRFBF30PBF-BE3
Nexperia USA Inc.