PSMN3R5-80YSFX
Nexperia USA Inc.
Nexperia USA Inc.
NEXTPOWER 80 V, 3.5 MOHM, 150 A,
$3.23
Available to order
Reference Price (USD)
1+
$3.23000
500+
$3.1977
1000+
$3.1654
1500+
$3.1331
2000+
$3.1008
2500+
$3.0685
Exquisite packaging
Discount
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Boost your electronic applications with PSMN3R5-80YSFX, a reliable Transistors - FETs, MOSFETs - Single by Nexperia USA Inc.. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, PSMN3R5-80YSFX meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7227 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 294W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SOT-1023, 4-LFPAK
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