IRFDC20PBF
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 600V 320MA 4DIP
$2.37
Available to order
Reference Price (USD)
1+
$2.49000
10+
$2.24800
100+
$1.80680
500+
$1.40526
1,000+
$1.16435
2,500+
$1.08405
5,000+
$1.04390
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Vishay Siliconix presents IRFDC20PBF, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, IRFDC20PBF delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.4Ohm @ 190mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: 4-HVMDIP
- Package / Case: 4-DIP (0.300", 7.62mm)
Related Products
STMicroelectronics
STB30NF20
Microchip Technology
2N7000-G
Infineon Technologies
IRLS3034TRL7PP
STMicroelectronics
STU9N65M2
Micro Commercial Co
MCG30N03A-TP
IXYS
MMIX1F44N100Q3
IXYS
IXFA36N20X3
Rohm Semiconductor
R6024KNJTL
onsemi
NTMFS4D2N10MDT1G
Texas Instruments