IRFHM3911TRPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 3.2A/20A 8PQFN
$0.95
Available to order
Reference Price (USD)
4,000+
$0.35254
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies presents IRFHM3911TRPBF, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, IRFHM3911TRPBF delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 115mOhm @ 6.3A, 10V
- Vgs(th) (Max) @ Id: 4V @ 35µA
- Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 29W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (3x3)
- Package / Case: 8-PowerTDFN
Related Products
Alpha & Omega Semiconductor Inc.
AON7406
Micro Commercial Co
SI2102-TP
Diodes Incorporated
DMNH15H110SK3-13
Nexperia USA Inc.
PMN25ENEAX
Nexperia USA Inc.
PSMN1R6-40YLC,115
Infineon Technologies
BSS806NH6327XTSA1
onsemi
NTMFS4926NT1G
Infineon Technologies
IPP80N06S407AKSA2
Infineon Technologies
IRFR3711TRLPBF
Infineon Technologies