IRFI4410ZPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 43A TO220AB FP
$3.12
Available to order
Reference Price (USD)
1+
$2.47000
10+
$2.23300
100+
$1.79440
500+
$1.39562
1,000+
$1.15638
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with IRFI4410ZPBF by Infineon Technologies, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, IRFI4410ZPBF ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 9.3mOhm @ 26A, 10V
- Vgs(th) (Max) @ Id: 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 47W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB Full-Pak
- Package / Case: TO-220-3 Full Pack
Related Products
IXYS
IXFA12N65X2-TRL
IXYS
IXTP80N10T
Vishay Siliconix
IRF620PBF
Panjit International Inc.
PJD16P06A_L2_00001
Diodes Incorporated
DMN4020LFDE-13
Rohm Semiconductor
RU1C002UNTCL
Toshiba Semiconductor and Storage
TK22A10N1,S4X
STMicroelectronics
STF11N65M5
Vishay Siliconix
SUD23N06-31-T4-GE3
Vishay Siliconix