RU1C002UNTCL
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 20V 200MA UMT3F
$0.39
Available to order
Reference Price (USD)
3,000+
$0.06440
6,000+
$0.05600
15,000+
$0.04760
30,000+
$0.04480
75,000+
$0.04200
150,000+
$0.03920
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of RU1C002UNTCL, a premium Transistors - FETs, MOSFETs - Single from Rohm Semiconductor. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, RU1C002UNTCL is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 2.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: UMT3F
- Package / Case: SC-85
Related Products
Toshiba Semiconductor and Storage
TK22A10N1,S4X
STMicroelectronics
STF11N65M5
Vishay Siliconix
SUD23N06-31-T4-GE3
Vishay Siliconix
IRF9520SPBF
Alpha & Omega Semiconductor Inc.
AOW125A60
Vishay Siliconix
SI3442BDV-T1-GE3
Panjit International Inc.
PJA3460-AU_R1_000A1
STMicroelectronics
STB20N95K5
Honeywell Aerospace
HTNFET-T
Infineon Technologies