IRFIBC20GPBF
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 600V 1.7A TO220-3
$2.86
Available to order
Reference Price (USD)
1+
$3.00000
10+
$2.71000
100+
$2.17800
500+
$1.69400
1,000+
$1.40360
3,000+
$1.30680
5,000+
$1.25840
Exquisite packaging
Discount
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Boost your electronic applications with IRFIBC20GPBF, a reliable Transistors - FETs, MOSFETs - Single by Vishay Siliconix. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IRFIBC20GPBF meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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