CSD19536KTT
Texas Instruments
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
$5.59
Available to order
Reference Price (USD)
500+
$2.89504
1,000+
$2.45485
Exquisite packaging
Discount
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Boost your electronic applications with CSD19536KTT, a reliable Transistors - FETs, MOSFETs - Single by Texas Instruments. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, CSD19536KTT meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DDPAK/TO-263-3
- Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
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