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IRFR110ATM

Fairchild Semiconductor
IRFR110ATM Preview
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
$0.25
Available to order
Reference Price (USD)
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500+
$0.2475
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$0.245
1500+
$0.2425
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$0.24
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$0.2375
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 400mOhm @ 2.35A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 20W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

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