IRFR9210TRPBF
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 200V 1.9A DPAK
$1.41
Available to order
Reference Price (USD)
2,000+
$0.50299
6,000+
$0.47937
10,000+
$0.46250
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover IRFR9210TRPBF, a versatile Transistors - FETs, MOSFETs - Single solution from Vishay Siliconix, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Panjit International Inc.
PJL9480_R2_00001
Infineon Technologies
IRF7831TRPBF
Nexperia USA Inc.
PMV15ENER
Vishay Siliconix
SIRA00DP-T1-GE3
IXYS
IXFK230N20T
Infineon Technologies
IRFZ48NPBF
onsemi
RFD3055LE
Diodes Incorporated
DMNH10H028SCT
Vishay Siliconix
SIHG40N60E-GE3
Toshiba Semiconductor and Storage