IRFZ48NPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 55V 64A TO220AB
$1.51
Available to order
Reference Price (USD)
1+
$1.33000
10+
$1.18300
100+
$0.94860
500+
$0.74968
1,000+
$0.60499
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IRFZ48NPBF by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IRFZ48NPBF inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 14mOhm @ 32A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1970 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 130W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
onsemi
RFD3055LE
Diodes Incorporated
DMNH10H028SCT
Vishay Siliconix
SIHG40N60E-GE3
Toshiba Semiconductor and Storage
TK210V65Z,LQ
IXYS
IXFA72N30X3-TRL
Diodes Incorporated
DMTH47M2SPSW-13
IXYS
IXFT320N10T2
Diodes Incorporated
ZVN4206ASTZ
onsemi
NVMFS5113PLWFT1G
Fairchild Semiconductor