IRFRC20TRPBF-BE3
Vishay Siliconix

Vishay Siliconix
MOSFET N-CH 600V 2A DPAK
$1.35
Available to order
Reference Price (USD)
1+
$1.35000
500+
$1.3365
1000+
$1.323
1500+
$1.3095
2000+
$1.296
2500+
$1.2825
Exquisite packaging
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Experience the power of IRFRC20TRPBF-BE3, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IRFRC20TRPBF-BE3 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63