IRFU110PBF
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 100V 4.3A TO251AA
$1.23
Available to order
Reference Price (USD)
1+
$1.07000
75+
$0.85907
150+
$0.75167
525+
$0.58290
1,050+
$0.46018
2,550+
$0.42951
5,025+
$0.40803
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance IRFU110PBF from Vishay Siliconix, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IRFU110PBF delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251AA
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Related Products
Texas Instruments
CSD19538Q2
Infineon Technologies
BSC077N12NS3GATMA1
Toshiba Semiconductor and Storage
TK2Q60D(Q)
onsemi
FDB86563-F085
onsemi
FDP047N08
Vishay Siliconix
IRFI510GPBF
onsemi
FDB082N15A
Infineon Technologies
IPS60R650CEAKMA1
onsemi
FCA47N60-F109
onsemi