APL602B2G
Microchip Technology
Microchip Technology
MOSFET N-CH 600V 49A T-MAX
$59.06
Available to order
Reference Price (USD)
30+
$43.94967
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose APL602B2G by Microchip Technology. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with APL602B2G inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 125mOhm @ 24.5A, 12V
- Vgs(th) (Max) @ Id: 4V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 730W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: T-MAX™ [B2]
- Package / Case: TO-247-3 Variant
Related Products
IXYS
IXFN100N50P
Vishay Siliconix
SI2336DS-T1-BE3
Wolfspeed, Inc.
C3M0025065K
Fairchild Semiconductor
FDMS0312S
Vishay Siliconix
IRF9520STRLPBF
Rohm Semiconductor
RF4E110GNTR
onsemi
FQD5N15TM
Diodes Incorporated
DMTH6016LFDFWQ-7R
Diodes Incorporated
DMN10H099SK3-13
Rohm Semiconductor