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IXFT320N10T2

IXYS
IXFT320N10T2 Preview
IXYS
MOSFET N-CH 100V 320A TO268
$20.99
Available to order
Reference Price (USD)
1+
$14.37000
30+
$12.08067
120+
$11.10100
510+
$9.46851
1,020+
$9.14200
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 1000W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268AA
  • Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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