IRL40T209ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 40V 300A 8HSOF
$7.49
Available to order
Reference Price (USD)
2,000+
$3.51120
Exquisite packaging
Discount
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Boost your electronic applications with IRL40T209ATMA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IRL40T209ATMA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 0.72mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 269 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-1
- Package / Case: 8-PowerSFN
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