IRLHM630TRPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 21A/40A PQFN
$1.20
Available to order
Reference Price (USD)
4,000+
$0.47800
8,000+
$0.45673
12,000+
$0.44153
Exquisite packaging
Discount
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Discover IRLHM630TRPBF, a versatile Transistors - FETs, MOSFETs - Single solution from Infineon Technologies, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 3170 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.7W (Ta), 37W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PQFN (3x3)
- Package / Case: 8-VQFN Exposed Pad
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