IRLS640A
onsemi
onsemi
MOSFET N-CH 200V 9.8A TO220F
$1.87
Available to order
Reference Price (USD)
1+
$1.78000
10+
$1.60700
100+
$1.30020
500+
$1.02140
1,000+
$0.85413
Exquisite packaging
Discount
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Boost your electronic applications with IRLS640A, a reliable Transistors - FETs, MOSFETs - Single by onsemi. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IRLS640A meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 180mOhm @ 4.9A, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1705 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F-3
- Package / Case: TO-220-3 Full Pack
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