ISC046N04NM5ATMA1
Infineon Technologies
Infineon Technologies
40V 4.6M OPTIMOS MOSFET SUPERSO8
$1.46
Available to order
Reference Price (USD)
1+
$1.46000
500+
$1.4454
1000+
$1.4308
1500+
$1.4162
2000+
$1.4016
2500+
$1.387
Exquisite packaging
Discount
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Infineon Technologies presents ISC046N04NM5ATMA1, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, ISC046N04NM5ATMA1 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 77A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Rds On (Max) @ Id, Vgs: 4.6mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id: 3.4V @ 17µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 50W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8 FL
- Package / Case: 8-PowerTDFN
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