NTBGS4D1N15MC
onsemi
onsemi
MOSFET N-CH 150V 20A/185A D2PAK
$6.24
Available to order
Reference Price (USD)
1+
$6.24000
500+
$6.1776
1000+
$6.1152
1500+
$6.0528
2000+
$5.9904
2500+
$5.928
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NTBGS4D1N15MC by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NTBGS4D1N15MC inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 185A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Rds On (Max) @ Id, Vgs: 4.1mOhm @ 104A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 574µA
- Gate Charge (Qg) (Max) @ Vgs: 88.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7285 pF @ 75 V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 316W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263)
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
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