ISL9N312AS3ST
Fairchild Semiconductor
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
$0.80
Available to order
Reference Price (USD)
1+
$0.80000
500+
$0.792
1000+
$0.784
1500+
$0.776
2000+
$0.768
2500+
$0.76
Exquisite packaging
Discount
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Discover high-performance ISL9N312AS3ST from Fairchild Semiconductor, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, ISL9N312AS3ST delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 12mOhm @ 58A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 75W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AB
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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