ISP12DP06NMXTSA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 60V 2.8A SOT223-4
$0.61
Available to order
Reference Price (USD)
1+
$0.61020
500+
$0.604098
1000+
$0.597996
1500+
$0.591894
2000+
$0.585792
2500+
$0.57969
Exquisite packaging
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Discover high-performance ISP12DP06NMXTSA1 from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, ISP12DP06NMXTSA1 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 125mOhm @ 2.8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 520µA
- Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
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