IST019N08NM5AUMA1
Infineon Technologies
Infineon Technologies
TRENCH 40<-<100V PG-HSOF-5
$5.11
Available to order
Reference Price (USD)
1+
$5.11000
500+
$5.0589
1000+
$5.0078
1500+
$4.9567
2000+
$4.9056
2500+
$4.8545
Exquisite packaging
Discount
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Enhance your circuit performance with IST019N08NM5AUMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust IST019N08NM5AUMA1 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 290A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 148µA
- Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 313W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-5-1
- Package / Case: 5-PowerSFN
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