IV1Q12160T4
Inventchip
Inventchip
SIC MOSFET, 1200V 160MOHM, TO-24
$19.64
Available to order
Reference Price (USD)
1+
$19.64000
500+
$19.4436
1000+
$19.2472
1500+
$19.0508
2000+
$18.8544
2500+
$18.658
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IV1Q12160T4 by Inventchip. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IV1Q12160T4 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 195mOhm @ 10A, 20V
- Vgs(th) (Max) @ Id: 2.9V @ 1.9mA
- Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V
- Vgs (Max): +20V, -5V
- Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 138W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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