IXFB150N65X2
IXYS

IXYS
MOSFET N-CH 650V 150A PLUS264
$34.86
Available to order
Reference Price (USD)
1+
$23.60000
25+
$20.06000
100+
$18.64400
500+
$16.52000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of IXFB150N65X2, a premium Transistors - FETs, MOSFETs - Single from IXYS. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IXFB150N65X2 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 17mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id: 5.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 20400 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1560W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS264™
- Package / Case: TO-264-3, TO-264AA