IXFK32N100Q3
IXYS
IXYS
MOSFET N-CH 1000V 32A TO264AA
$33.18
Available to order
Reference Price (USD)
1+
$22.46000
25+
$19.09120
100+
$17.74340
500+
$15.72200
Exquisite packaging
Discount
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Discover high-performance IXFK32N100Q3 from IXYS, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IXFK32N100Q3 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 6.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 9940 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1250W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264AA (IXFK)
- Package / Case: TO-264-3, TO-264AA
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