IXFN110N85X
IXYS
IXYS
MOSFET N-CH 850V 110A SOT227B
$63.67
Available to order
Reference Price (USD)
1+
$46.64000
10+
$43.61300
100+
$37.81500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of IXFN110N85X, a premium Transistors - FETs, MOSFETs - Single from IXYS. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IXFN110N85X is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 850 V
- Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 33mOhm @ 55A, 10V
- Vgs(th) (Max) @ Id: 5.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1170W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
Related Products
IXYS
IXFN74N100X
Infineon Technologies
IPB042N10N3GATMA1
Microchip Technology
VN3205N3-G
Rohm Semiconductor
RUE003N02TL
NXP USA Inc.
BUK653R5-55C,127
Nexperia USA Inc.
PMN25ENEH
Nexperia USA Inc.
PMV48XPAR
Vishay Siliconix
SIHF080N60E-GE3
Renesas Electronics America Inc
NP82N04NDG-S18-AY
Fairchild Semiconductor