PMN25ENEH
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 30V 6.1A 6TSOP
$0.16
Available to order
Reference Price (USD)
1+
$0.16197
500+
$0.1603503
1000+
$0.1587306
1500+
$0.1571109
2000+
$0.1554912
2500+
$0.1538715
Exquisite packaging
Discount
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PMN25ENEH by Nexperia USA Inc. is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, PMN25ENEH ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 24mOhm @ 6.1A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 597 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 560mW (Ta), 6.25mW (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SC-74, SOT-457
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