IXFN140N20P
IXYS
IXYS
MOSFET N-CH 200V 115A SOT227B
$27.58
Available to order
Reference Price (USD)
1+
$21.32000
10+
$19.38000
25+
$17.92640
100+
$16.47300
250+
$15.01952
500+
$14.05050
Exquisite packaging
Discount
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Boost your electronic applications with IXFN140N20P, a reliable Transistors - FETs, MOSFETs - Single by IXYS. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IXFN140N20P meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
- Rds On (Max) @ Id, Vgs: 18mOhm @ 70A, 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 680W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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