TSM1NB60CH C5G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 600V 1A TO251
$1.82
Available to order
Reference Price (USD)
1+
$0.80000
10+
$0.70300
100+
$0.54240
500+
$0.40180
1,875+
$0.32144
3,750+
$0.29130
5,625+
$0.28126
Exquisite packaging
Discount
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Enhance your circuit performance with TSM1NB60CH C5G, a premium Transistors - FETs, MOSFETs - Single from Taiwan Semiconductor Corporation. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust TSM1NB60CH C5G for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 39W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251 (IPAK)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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