IXFN230N10
IXYS
IXYS
MOSFET N-CH 100V 230A SOT-227B
$51.75
Available to order
Reference Price (USD)
1+
$40.53000
10+
$37.90400
30+
$35.05600
100+
$32.86500
250+
$30.67400
Exquisite packaging
Discount
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Boost your electronic applications with IXFN230N10, a reliable Transistors - FETs, MOSFETs - Single by IXYS. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IXFN230N10 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 6mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 700W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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