IXFN44N80P
IXYS
IXYS
MOSFET N-CH 800V 39A SOT-227B
$32.94
Available to order
Reference Price (USD)
10+
$21.40500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover IXFN44N80P, a versatile Transistors - FETs, MOSFETs - Single solution from IXYS, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 694W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
Related Products
STMicroelectronics
STD3NK60Z-1
Nexperia USA Inc.
BUK7275-100A,118
STMicroelectronics
STD28P3LLH6AG
Vishay Siliconix
IRFU210PBF
IXYS
IXTH36N50P
Rohm Semiconductor
RCJ120N20TL
onsemi
CPH3331-TL-E
onsemi
MTB60N05HDL
Fairchild Semiconductor
HUF76443P3
Toshiba Semiconductor and Storage