IXFN50N120SIC
IXYS
IXYS
SICFET N-CH 1200V 47A SOT227B
$81.11
Available to order
Reference Price (USD)
10+
$61.47200
Exquisite packaging
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Discover IXFN50N120SIC, a versatile Transistors - FETs, MOSFETs - Single solution from IXYS, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.2V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 20 V
- Vgs (Max): +20V, -5V
- Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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