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IXFN80N50

IXYS
IXFN80N50 Preview
IXYS
MOSFET N-CH 500V 80A SOT-227B
$58.65
Available to order
Reference Price (USD)
1+
$44.59000
10+
$41.69300
30+
$38.56000
100+
$36.15000
250+
$33.74000
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9890 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 700W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC

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