IXFP36N20X3
IXYS
IXYS
MOSFET N-CH 200V 36A TO220
$4.58
Available to order
Reference Price (USD)
1+
$3.16000
50+
$2.54260
100+
$2.31650
500+
$1.87580
1,000+
$1.58200
Exquisite packaging
Discount
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IXYS presents IXFP36N20X3, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, IXFP36N20X3 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 176W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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