STI21N65M5
STMicroelectronics
STMicroelectronics
MOSFET N-CH 650V 17A I2PAK
$2.67
Available to order
Reference Price (USD)
1+
$3.82000
50+
$3.06900
100+
$2.79620
500+
$2.26424
1,000+
$1.90960
2,500+
$1.81412
5,000+
$1.74592
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
STMicroelectronics presents STI21N65M5, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, STI21N65M5 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 179mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
onsemi
HUF76429S3ST
onsemi
FCH190N65F-F155
onsemi
FDD5N50NZFTM
Nexperia USA Inc.
BUK7S1R0-40HJ
Toshiba Semiconductor and Storage
TK14A55D(STA4,Q,M)
GeneSiC Semiconductor
GA10SICP12-263
Diodes Incorporated
DMTH3002LK3-13
Taiwan Semiconductor Corporation
TSM300NB06CR RLG
Infineon Technologies
IPF05N03LAG
Nexperia USA Inc.