IXFP36N20X3M
IXYS
IXYS
MOSFET N-CH 200V 36A TO220
$4.66
Available to order
Reference Price (USD)
1+
$3.22000
50+
$2.58760
100+
$2.35750
500+
$1.90900
1,000+
$1.61000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IXFP36N20X3M by IXYS. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IXFP36N20X3M inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 36W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 Isolated Tab
- Package / Case: TO-220-3 Full Pack, Isolated Tab
Related Products
STMicroelectronics
STL55NH3LL
onsemi
NVMFS4C01NWFT3G
Nexperia USA Inc.
PSMN017-60YS,115
Renesas Electronics America Inc
H5N2901FN-E
Renesas Electronics America Inc
RJK0657DPA-00#J5A
Toshiba Semiconductor and Storage
TK100S04N1L,LXHQ
Toshiba Semiconductor and Storage
SSM3K335R,LF
Microchip Technology
APT7M120B
Microchip Technology
APT20M22LVFRG
Infineon Technologies