IXFQ50N60X
IXYS
IXYS
MOSFET N-CH 600V 50A TO3P
$8.80
Available to order
Reference Price (USD)
30+
$6.92900
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with IXFQ50N60X, a premium Transistors - FETs, MOSFETs - Single from IXYS. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust IXFQ50N60X for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 73mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 660W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
Related Products
STMicroelectronics
STD105N10F7AG
Infineon Technologies
BSO080P03NS3GXUMA1
onsemi
NTMFS020N06CT1G
onsemi
SCH2825-TL-E
onsemi
5HP01C-TB-E
NXP USA Inc.
PMF250XN,115
Panjit International Inc.
PJQ4408P-AU_R2_000A1
onsemi
FDP2710
onsemi
2SJ583LS
STMicroelectronics