IXFT50N50P3
IXYS
IXYS
MOSFET N-CH 500V 50A TO268
$11.89
Available to order
Reference Price (USD)
1+
$9.25000
30+
$7.58500
120+
$6.84500
510+
$5.73500
1,020+
$5.18000
Exquisite packaging
Discount
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Boost your electronic applications with IXFT50N50P3, a reliable Transistors - FETs, MOSFETs - Single by IXYS. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IXFT50N50P3 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 120mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 0 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 4335 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 960W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268AA
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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