IXFT80N65X2HV-TRL
IXYS
IXYS
MOSFET N-CH 650V 80A TO268HV
$11.63
Available to order
Reference Price (USD)
1+
$11.62538
500+
$11.5091262
1000+
$11.3928724
1500+
$11.2766186
2000+
$11.1603648
2500+
$11.044111
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of IXFT80N65X2HV-TRL, a premium Transistors - FETs, MOSFETs - Single from IXYS. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IXFT80N65X2HV-TRL is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 38mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 890W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268HV (IXFT)
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Related Products
Diodes Incorporated
DMN62D4LFB-7B
Alpha & Omega Semiconductor Inc.
AOB42S60L
Fairchild Semiconductor
IRLS540A
Analog Devices Inc./Maxim Integrated
MAX8555AEUB
Diodes Incorporated
DMP2160UW-7
Infineon Technologies
IRFP048NPBF
Vishay Siliconix
SI4455DY-T1-GE3
Texas Instruments
CSD17551Q5A
Harris Corporation
IRFR421
Renesas Electronics America Inc