IXFX34N80
IXYS
IXYS
MOSFET N-CH 800V 34A PLUS247
$20.51
Available to order
Reference Price (USD)
1+
$20.33000
30+
$17.09400
120+
$15.70800
510+
$13.39800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IXFX34N80 by IXYS. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IXFX34N80 inquire now for more details!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 240mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 560W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247™-3
- Package / Case: TO-247-3 Variant
Related Products
Nexperia USA Inc.
PXN5R4-30QLJ
Infineon Technologies
IRFIZ34NPBF
Infineon Technologies
SPB100N03S203T
Micro Commercial Co
SIL3407-TP
Vishay Siliconix
IRFBC40ASTRRPBF
Rohm Semiconductor
R6055VNZ4C13
NXP Semiconductors
PMN48XP,125
onsemi
NTF3055-100T1G
Nexperia USA Inc.
BUK9M28-80EX
STMicroelectronics