IXGA20N120B3-TRL
IXYS
IXYS
IXGA20N120B3 TRL
$4.33
Available to order
Reference Price (USD)
1+
$4.33284
500+
$4.2895116
1000+
$4.2461832
1500+
$4.2028548
2000+
$4.1595264
2500+
$4.116198
Exquisite packaging
Discount
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The IXGA20N120B3-TRL Single IGBT by IXYS sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with IXYS for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 36 A
- Current - Collector Pulsed (Icm): 80 A
- Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 16A
- Power - Max: 180 W
- Switching Energy: 920µJ (on), 560µJ (off)
- Input Type: Standard
- Gate Charge: 51 nC
- Td (on/off) @ 25°C: 16ns/150ns
- Test Condition: 600V, 16A, 15Ohm, 15V
- Reverse Recovery Time (trr): 31 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D2Pak)
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