NGTB60N65FL2WG
onsemi
onsemi
IGBT FIELD STOP 650V 100A TO247
$11.35
Available to order
Reference Price (USD)
1+
$11.92000
30+
$10.26733
120+
$8.91517
510+
$7.76318
1,020+
$6.76147
Exquisite packaging
Discount
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Optimize power control with NGTB60N65FL2WG Single IGBTs from onsemi, a leader in semiconductor solutions. Suited for medical equipment, aerospace, and consumer electronics, these transistors deliver precise switching and minimal noise. Highlights include high input impedance, scalable power ratings, and RoHS compliance. onsemi ensures NGTB60N65FL2WG meets rigorous performance benchmarks. Inquire today to find the perfect fit for your application!
Specifications
- Product Status: Obsolete
- IGBT Type: Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 240 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
- Power - Max: 595 W
- Switching Energy: 1.59mJ (on), 660µJ (off)
- Input Type: Standard
- Gate Charge: 318 nC
- Td (on/off) @ 25°C: 117ns/265ns
- Test Condition: 400V, 60A, 10Ohm, 15V
- Reverse Recovery Time (trr): 96 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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