IXTA3N100P
IXYS
IXYS
MOSFET N-CH 1000V 3A TO263
$3.34
Available to order
Reference Price (USD)
50+
$2.65500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance IXTA3N100P from IXYS, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IXTA3N100P delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AA
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Renesas Electronics America Inc
RJK0352DSP-00#J0
Toshiba Semiconductor and Storage
SSM3J377R,LXHF
Diodes Incorporated
ZXMN6A07FQTA
Panjit International Inc.
PJD100N04-AU_L2_000A1
Infineon Technologies
BSC034N10LS5ATMA1
Renesas Electronics America Inc
2SK1620L-E
Nexperia USA Inc.
NX7002AKW,115
Renesas Electronics America Inc
2SK4202-S19-AY
Infineon Technologies
SPD03N60S5
Fairchild Semiconductor