IXTH30N60P
IXYS
IXYS
MOSFET N-CH 600V 30A TO247
$10.60
Available to order
Reference Price (USD)
1+
$7.28000
30+
$5.96567
120+
$5.38350
510+
$4.51051
1,020+
$4.07400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IXTH30N60P by IXYS. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IXTH30N60P inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 540W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
Related Products
Vishay Siliconix
SI7463DP-T1-GE3
Infineon Technologies
SPD07N60C3ATMA1
Taiwan Semiconductor Corporation
TSM2N60ECP ROG
Vishay Siliconix
SUM60N10-17-E3
Infineon Technologies
IRF60DM206
Renesas Electronics America Inc
2SJ128-AZ
Alpha & Omega Semiconductor Inc.
AOW360A70
Vishay Siliconix
SIHB100N60E-GE3
Vishay Siliconix
SUM65N20-30-E3
STMicroelectronics