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SUM60N10-17-E3

Vishay Siliconix
SUM60N10-17-E3 Preview
Vishay Siliconix
MOSFET N-CH 100V 60A TO263
$3.05
Available to order
Reference Price (USD)
800+
$1.58674
1,600+
$1.46329
2,400+
$1.36833
5,600+
$1.32085
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 3.75W (Ta), 150W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D²Pak)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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