IXTK110N20L2
IXYS
IXYS
MOSFET N-CH 200V 110A TO264
$37.96
Available to order
Reference Price (USD)
1+
$25.70000
25+
$21.84520
100+
$20.30300
500+
$17.99000
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IXTK110N20L2 by IXYS. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IXTK110N20L2 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 960W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264 (IXTK)
- Package / Case: TO-264-3, TO-264AA
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