IXTK88N30P
IXYS
IXYS
MOSFET N-CH 300V 88A TO264
$11.38
Available to order
Reference Price (USD)
25+
$8.24120
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IXTK88N30P by IXYS is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IXTK88N30P ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300 V
- Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 600W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264 (IXTK)
- Package / Case: TO-264-3, TO-264AA
Related Products
Diodes Incorporated
DMP3030SN-7
Vishay Siliconix
SQJ412EP-T1_GE3
STMicroelectronics
STD4NK100Z
Vishay Siliconix
IRFRC20TRLPBF-BE3
IXYS
IXFK170N25X3
Microchip Technology
APT10035LFLLG
Fairchild Semiconductor
IRFR210BTM
IXYS
IXTT52N30P
Infineon Technologies
BSP135H6906XTSA1
Vishay Siliconix