STD4NK100Z
STMicroelectronics
STMicroelectronics
MOSFET N-CH 1000V 2.2A DPAK
$2.69
Available to order
Reference Price (USD)
2,500+
$1.81830
5,000+
$1.75780
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
STMicroelectronics presents STD4NK100Z, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, STD4NK100Z delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 6.8Ohm @ 1.1A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 601 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 90W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Vishay Siliconix
IRFRC20TRLPBF-BE3
IXYS
IXFK170N25X3
Microchip Technology
APT10035LFLLG
Fairchild Semiconductor
IRFR210BTM
IXYS
IXTT52N30P
Infineon Technologies
BSP135H6906XTSA1
Vishay Siliconix
SISH110DN-T1-GE3
Infineon Technologies
IRLP3034PBF
onsemi
MCH3377-TL-E
NTE Electronics, Inc